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? 2001-2012 microchip technology inc. ds21425c-page 1 tc4467/tc4468/tc4469 features ? high peak output current: 1.2 a ? wide operating range: - 4.5 v to 18 v ? symmetrical rise/fall times: 25 nsec ? short, equal delay times: 75 nsec ? latch-proof. will withstand 500 ma inductive kickback ? 3 input logic choices: - and / nand / and + inv ? esd protection on all pins: 2 kv applications ? general purpose cmos logic buffer ? driving all four mosfets in an h-bridge ? direct small motor driver ? relay or peripheral drivers ? ccd driver ? pin-switching network driver package types general description the tc4467/tc4468/tc4469 devices are a family of four-output cmos buffers/mosfet drivers with 1.2 a peak drive capability. unlike other mosfet drivers, these devices have two inputs for each output. the inputs are configured as logic gates: nand (tc4467), and (tc4468) and and/inv (tc4469). the tc4467/tc4468/tc4469 drivers can continuously source up to 250 ma into ground referenced loads. these devices are ideal for direct driving low current motors or driving mosfets in a h-bridge configuration for higher current motor drive (see section 5.0 for details). having the logic gates onboard the driver can help to reduce component count in many designs. the tc4467/tc4468/tc4469 devices are very robust and highly latch-up resistant. they can tolerate up to 5 v of noise spiking on the ground line and can handle up to 0.5 a of reverse current on the driver outputs. the tc4467/4468/4469 devices are available in commercial, industrial and military temperature ranges. 1 2 3 4 5 6 7 8 16 13 12 11 10 9 1a 1b 2a 2b 3a 3b gnd gnd v dd 1y 2y 3y 4y 4b 4a v dd 15 14 tc4467 tc4468 tc4469 16-pin soic (wide) 1 2 3 4 5 6 7 14 13 12 11 10 9 8 1a 1b 2a 2b 3a 3b gnd v dd 1y 2y 3y 4y 4b 4a tc4467 tc4468 tc4469 14-pin pdip/cerdip logic-input cmos quad drivers
tc4467/tc4468/tc4469 ds21425c-page 2 ? 2001-2012 microchip technology inc. logic diagrams tc4468 tc4467 output tc446x v dd 14 7 1y 13 1 2 1b 1a 2y 12 3 4 2b 2a 3y 11 5 6 3b 3a 4y 10 8 9 4b 4a gnd tc4469 14 7 1y 13 1 2 1b 1a 2y 12 3 4 2b 2a 3y 11 5 6 3b 3a 4y 10 8 9 4b 4a 14 7 1y 13 1 2 1b 1a 2y 12 3 4 2b 2a 3y 11 5 6 3b 3a 4y 10 8 9 4b 4a gnd v dd v dd v dd 6 gnd
? 2001-2012 microchip technology inc. ds21425c-page 3 tc4467/tc4468/tc4469 1.0 electrical characteristics absolute maximum ratings? supply voltage ...............................................................+20 v input voltage ............................. (gnd ? 5 v) to (v dd + 0.3 v) package power dissipation: (t a ?? 70c) pdip...................................................................800 mw cerdip .............................................................840 mw soic ..................................................................760 mw package thermal resistance: cerdip r ? j-a ...................................................100c/w cerdip r ? j-c .....................................................23c/w pdip r ? j-a ..........................................................80c/w pdip r ? j-c ..........................................................35c/w soic r ? j-a ..........................................................95c/w soic r ? j-c ..........................................................28c/w operating temperature range: c version ................................................... 0c to +70c e version.................................................-40c to +85c m version ..............................................-55c to +125c maximum chip temperature ....................................... +150c storage temperature range .........................-65c to +150c ?notice: stresses above those listed under "maximum ratings" may cause permanent damage to the device. this is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specific ation is not implied. exposure to maximum rating conditions for extended periods may affect device reliability. electrical specifications electrical characteristics: unless otherwise noted, t a = +25c, with 4.5 v ??? v dd ??? 18 v. parameters sym min typ max units conditions input logic 1, high input voltage v ih 2.4 ? v dd v note 3 logic 0, low input voltage v il ??0.8v note 3 input current i in -1.0 ? +1.0 a 0 v ??? v in ??? v dd output high output voltage v oh v dd ? 0.025 ? ? v i load = 100 a (note 1) low output voltage v ol ??0.15vi load = 10 ma (note 1) output resistance r o ?1015 ? i out = 10 ma, v dd = 18 v peak output current i pk ?1.2?a continuous output current i dc ? ? 300 ma single output ? ? 500 total package latch-up protection withstand reverse current i ? 500 ? ma 4.5 v ??? v dd ??? 16 v switching time (note 1) rise time t r ? 15 25 nsec figure 4-1 fall time t f ? 15 25 nsec figure 4-1 delay time t d1 ? 40 75 nsec figure 4-1 delay time t d2 ? 40 75 nsec figure 4-1 power supply power supply current i s ?1.54ma power supply voltage v dd 4.5 ? 18 v note 2 note 1: totem pole outputs should not be paralleled because the propagation delay differences from one to the other could cause one dri ver to drive high a few nanoseconds before another. the resulting current spike, although short, may decrease the life of the device. switching times are ensured by design. 2: when driving all four outputs simultaneously in the same direction, v dd will be limited to 16 v. this reduces the chance that internal dv/dt will cause high-power dissipation in the device. 3: the input threshold has approximately 50 mv of hysteresis centered at approximately 1.5 v. input rise times should be kept below 5 sec to avoid high internal peak currents during input transitions. static input levels should also be maintained above the maximum, or below the minimum, input levels specified in the "electrical characteristics" to avoid increased power dissipation in the device.
tc4467/tc4468/tc4469 ds21425c-page 4 ? 2001-2012 microchip technology inc. electrical specifications (operating temperatures) truth table electrical characteristics: unless otherwise noted, over oper ating temperature range with 4.5 v ??? v dd ??? 18 v. parameters sym min typ max units conditions input logic 1, high input voltage v ih 2.4 ? ? v note 3 logic 0, low input voltage v il ??0.8v note 3 input current i in -10 ? 10 a 0 v ??? v in ??? v dd output high output voltage v oh v dd ? 0.025 ? ? v i load = 100 a (note 1) low output voltage v ol ? ? 0.30 v i load = 10 ma (note 1) output resistance r o ?2030 ? i out = 10 ma, v dd = 18 v peak output current i pk ?1.2?a continuous output current i dc ? ? 300 ma single output ? ? 500 total package latch-up protection withstand reverse current i ? 500 ? ma 4.5 v ??? v dd ??? 16 v switching time (note 1) rise time t r ? 15 50 nsec figure 4-1 fall time t f ? 15 50 nsec figure 4-1 delay time t d1 ? 40 100 nsec figure 4-1 delay time t d2 ? 40 100 nsec figure 4-1 power supply power supply current i s ??8ma power supply voltage v dd 4.5 ? 18 v note 2 note 1: totem pole outputs should not be paralleled because the propagation delay differences from one to the other could cause one dri ver to drive high a few nanoseconds before another. the resulting current spike, although short, may decrease the life of the device. switching times are ensured by design. 2: when driving all four outputs simultaneously in the same direction, v dd will be limited to 16 v. this reduces the chance that internal dv/dt will cause high-power dissipation in the device. 3: the input threshold has approximately 50 mv of hysteresis centered at approximately 1.5 v. input rise times should be kept below 5 sec to avoid high internal peak currents during input transitions. static input levels should also be maintained above the maximum, or below the minimum, input levels specified in the "electrical characteristics" to avoid increased power dissipation in the device. part no. tc4467 nand tc4468 and tc4469 and/inv inputs a hhllhhllhhll inputs b hlhlhlhlhlhl outputs tc446xlhhhhllllhll legend: h = high l = low
? 2001-2012 microchip technology inc. ds21425c-page 5 tc4467/tc4468/tc4469 2.0 typical performance curves note: t a = +25c, with 4.5 v ??? v dd ??? 18 v. figure 2-1: rise time vs. supply voltage. figure 2-2: rise time vs. capacitive load. figure 2-3: rise/fall times vs. temperature. figure 2-4: fall time vs. supply voltage. figure 2-5: fall time vs. capacitive load. figure 2-6: propagation delay time vs. supply voltage. note: the graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. the performance characteristics listed herein are not tested or guaranteed. in some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 14 0 12 0 1 00 80 60 4 0 2 0 0 3 5 7 9 11 1 3 1 5 17 1 9 2200 pf 0 p p 1600 pf 1000 pf 470 pf 100 pf t r i s e ( nsec ) v su ppl y ( v ) 14 0 12 0 1 00 80 60 4 0 2 0 0 1 00 1 000 10 , 00 0 10 v 15 v v v v 5 v t r i s e ( nsec ) c l o a d ( pf ) 0 - 50 time ( nsec ) 5 1 0 1 5 2 0 2 5 -2 5 0 2 5 50 7 5 1 00 12 5 t fall t rise v su ppl y = 17. 5 v c l o a d = 470 pf temperature (
tc4467/tc4468/tc4469 ds21425c-page 6 ? 2001-2012 microchip technology inc. 2.0 typical performance curves (continued) note: t a = +25c, with 4.5 v ??? v dd ??? 18 v. figure 2-7: input amplitude vs. delay times. figure 2-8: quiescent supply current vs. supply voltage. figure 2-9: high-state output resistance. figure 2-10: propagation delay times vs. temperatures. figure 2-11: quiescent supply current vs. temperature. figure 2-12: low-state output resistance. 14 0 12 0 1 00 80 60 4 0 2 0 0 1 9 1 0 d elay time ( nsec ) 2 3 4 5 6 7 8 inp u t fallin g inp u t ri s in g v drive ( v ) t d1 t d2 v dd v = 12 v 0 4 0 . 5 1. 0 1. 5 2. 0 2. 5 6 8 1 0 12 14 1 6 1 8 ou tp u t s = 1 outputs = 0 v su ppl y (v ) i q uiescent ( ma ) 0 4 6 8 1 0 12 14 1 6 1 8 v su ppl y ( v ) 5 1 0 1 5 2 0 2 5 30 35 r d s ( on ) ( c 7 0 2 0 1 00 12 0 d elay time ( nsec ) -4 0 -2 0 0 2 0 4 0 60 80 30 4 0 50 60 - 60
? 2001-2012 microchip technology inc. ds21425c-page 7 tc4467/tc4468/tc4469 2.0 typical performance curves (continued) note: (load on single output only). figure 2-13: supply current vs. capacitive load. figure 2-14: supply current vs. capacitive load. figure 2-15: supply current vs. capacitive load. figure 2-16: supply current vs. frequency. figure 2-17: supply current vs. frequency. figure 2-18: supply current vs. frequency. 60 0 1 00 1 000 10 , 00 0 50 4 0 30 2 0 1 0 2mh hz 1 mhz 1 mhz 1mh 50 00 kh z 2 00 kh z 2 0 kh z i su ppl y ( ma ) c l o a d ( pf ) v dd = 1 8 v 60 0 1 00 1 000 10 , 00 0 50 4 0 30 2 0 1 0 2 mhz 2 mhz 1 mhz 5 00 kh z 2 00 kh z 2 0 kh z c l o a d ( pf ) i su pply ( ma ) v dd v = 12 v 60 50 4 0 30 2 0 1 0 0 1 00 1 000 10 , 00 0 1 mhz 500 kh z 2 00 kh z 2 0 kh z 2 mhz i su pply ( ma ) c l o a d (p f ) v v dd v = 6 v 60 0 1 00 1 000 frequency ( khz ) 50 4 0 30 2 0 1 0 2200 pf 1 1 000 pf p 100 pf 1 0 10 , 00 0 v dd = 1 8 v i su pply ( ma ) 60 0 1 0 1 00 frequency ( khz ) 50 4 0 30 2 0 1 0 1 000 2200 pf p p 1000 pf 100 pf 10 , 00 0 i su pply ( ma ) v dd v = 12 v 60 0 1 0 1 000 1 00 frequency ( khz ) 50 4 0 30 2 0 1 0 2200 pf 1000 pf 100 pf 10 , 00 0 i su pply ( ma ) v v dd = 6 v
tc4467/tc4468/tc4469 ds21425c-page 8 ? 2001-2012 microchip technology inc. 3.0 pin descriptions the descriptions of the pins are listed in table 3-1. table 3-1: pin function table 14-pin pdip, cerdip 16-pin soic (wide) description symbol symbol 1a 1a input a for driver 1, ttl/cmos compatible input 1b 1b input b for driver 1, ttl/cmos compatible input 2a 2a input a for driver 2, ttl/cmos compatible input 2b 2b input b for driver 2, ttl/cmos compatible input 3a 3a input a for driver 3, ttl/cmos compatible input 3b 3b input b for driver 3, ttl/cmos compatible input gnd gnd ground ? gnd ground 4a 4a input a for driver 4, ttl/cmos compatible input 4b 4b input b for driver 4, ttl/cmos compatible input 4y 4y output for driver 4, cmos push-pull output 3y 3y output for driver 3, cmos push-pull output 2y 2y output for driver 2, cmos push-pull output 1y 1y output for driver 1, cmos push-pull output v dd v dd supply input, 4.5 v to 18 v ?v dd supply input, 4.5 v to 18 v
? 2001-2012 microchip technology inc. ds21425c-page 9 tc4467/tc4468/tc4469 4.0 detailed description 4.1 supply bypassing large currents are required to charge and discharge large capacitive loads quickly. for example, charging a 1000 pf load to 18 v in 25 nsec requires 0.72 a from the device's power supply. to ensure low supply impedance over a wide frequency range, a 1 f film capacitor in parallel with one or two low-inductance, 0.1 f ceramic disk capacitors with short lead lengths (<0.5 in.) normally provide adequate bypassing. 4.2 grounding the tc4467 and tc4469 contain inverting drivers. potential drops developed in common ground impedances from input to output will appear as negative feedback and degrade switching speed characteristics. instead, individual ground returns for input and output circuits, or a ground plane, should be used. 4.3 input stage the input voltage level changes the no-load or quiescent supply current. the n-channel mosfet input stage transistor drives a 2.5 ma current source load. with logic ? 0 ? outputs, maximum quiescent supply current is 4 ma. logic ? 1 ? output level signals reduce quiescent current to 1.4 ma, maximum. unused driver inputs must be connected to v dd or v ss . minimum power dissipation occurs for logic ? 1 ? outputs. the drivers are designed with 50 mv of hysteresis, which provides clean transitions and minimizes output stage current spiking when changing states. input volt- age thresholds are approximately 1.5 v, making any voltage greater than 1.5 v, up to v dd , a logic ? 1 ? input. input current is less than 1 a over this range. 4.4 power dissipation the supply current versus frequency and supply current versus capacitive load characteristic curves will aid in determining power dissipation calculations. microchip technology's cmos drivers have greatly reduced quiescent dc power consumption. input signal duty cycle, power supply voltage and load type influence package power dissipation. given power dissipation and package thermal resistance, the maxi- mum ambient operating temperature is easily calculated. the 14-pin plastic package junction-to- ambient thermal resistance is 83.3c/w. at +70c, the package is rated at 800 mw maximum dissipation. maximum allowable chip temperature is +150c. three components make up total package power dissipation: 1. load-caused dissipation (p l ). 2. quiescent power (p q ). 3. transition power (p t ). a capacitive-load-caused dissipation (driving mosfet gates), is a direct function of frequency, capacitive load and supply voltage. the power dissipation is: equation a resistive-load-caused dissipation for ground- referenced loads is a function of duty cycle, load current and load voltage. the power dissipation is: equation p l fcv s 2 = v s supply voltage = c capacitive load = f switching frequency = p l dv s v l ? ?? i l = i l load current = dduty cycle = v s supply voltage = v l load voltage =
tc4467/tc4468/tc4469 ds21425c-page 10 ? 2001-2012 microchip technology inc. a resistive-load-caused dissipation for supply- referenced loads is a function of duty cycle, load current and output voltage. the power dissipation is equation quiescent power dissipation depends on input signal duty cycle. logic high outputs result in a lower power dissipation mode, with only 0.6 ma total current drain (all devices driven). logic low outputs raise the current to 4 ma maximum. the quiescent power dissipation is: equation transition power dissipation arises in the complimen- tary configuration (tc446x) because the output stage n-channel and p-channel mos transistors are on simultaneously for a very short period when the output changes. the transition power dissipation is approximately: equation package power dissipation is the sum of load, quiescent and transition power dissipations. an example shows the relative magnitude for each term: maximum operating temperature is: equation figure 4-1: switching time test circuit. p l dv o i l = i l load current = v o device output voltage = d duty cycle = p q v s di h ?? 1d ? ?? i l + ?? = i l quiescent current with all outputs high = i h quiescent current with all outputs low = d duty cycle = v s supply voltage = (4 ma max.) (0.6 ma max.) note: ambient operating temperature should not exceed +85c for "ejd" device or +125c for "mjd" device. p t fv s 10 10 9 ? ? ?? = v s 15 v = c 1000 pf capacitive load = d50% = f200khz = p d package power dissipation = p l p q p t ++ = 45mw 35mw 30mw ++ = 110mw = t j ? ja p d ?? ? 141 ? c = ? ja junction-to-ambient thernal resistance = t j maximum allowable junction temperature = (+150 ? c ? (83.3 ? c/w) 14-pin plastic package v out 470 pf 1b 1a 2b 2a 3b 3a 4b 4a 1f film 0.1 f ceramic 90% 10% 10% 10% 90% +5 v input (a, b) v dd output 0v 0v 90% 1 2 3 4 5 6 8 9 7 10 11 12 13 14 v dd t r t d1 t f t d2 input: 100 khz, square wave, t rise = t fall ? 10 nsec
? 2001-2012 microchip technology inc. ds21425c-page 11 tc4467/tc4468/tc4469 5.0 applications information figure 5-1: stepper motor drive. figure 5-2: quad driver for h-bridge motor control. +12 v 14 tc4469 13 12 11 10 7 9 8 6 5 4 3 2 1 red gray yel blk motor b a airpax #m82102-p2 7.5/step 5 13 +5 v to +15 v 14 tc4469 direction pwm speed 18 v fwd 13 12 11 10 7 9 8 6 5 4 3 2 1 rev motor m
tc4467/tc4468/tc4469 ds21425c-page 12 ? 2001-2012 microchip technology inc. 6.0 packaging information 6.1 package marking information 14-lead pdip (300 mil) example: 14-lead cerdip (300 mil) example: 16-lead soic (300 mil) example : xxxxxxxxxxx xxxxxxxxxxx yywwnnn xxxxxxxxxxx yywwnnn tc4469coe xxxxxxxxxxxxxx xxxxxxxxxxxxxx yywwnnn xxxxxxxxxxxxxx xxxxxxxxxxxxxx yywwnnn tc4467cpd yywwnnn tc4468ejd yywwnnn legend: xx...x customer-specific information y year code (last digit of calendar year) yy year code (last 2 digits of calendar year) ww week code (week of january 1 is week ?01?) nnn alphanumeric traceability code pb-free jedec designator for matte tin (sn) * this package is pb-free. the pb-free jedec designator ( ) can be found on the outer packaging for this package. note : in the event the full microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 3 e 3 e
? 2001-2012 microchip technology inc. ds21425c-page 13 tc4467/tc4468/tc4469 14-lead plastic dual in-line (p) ? 300 mil (pdip) e1 n d 1 2 eb ? e c a a1 b b1 l a2 p ? units inches* millimeters dimension limits min nom max min nom max number of pins n 14 14 pitch p .100 2.54 top to seating plane a .140 .155 .170 3.56 3.94 4.32 molded package thickness a2 .115 .130 .145 2.92 3.30 3.68 base to seating plane a1 .015 0.38 shoulder to shoulder width e .300 .313 .325 7.62 7.94 8.26 molded package width e1 .240 .250 .260 6.10 6.35 6.60 overall length d .740 .750 .760 18.80 19.05 19.30 tip to seating plane l .125 .130 .135 3.18 3.30 3.43 lead thickness c .008 .012 .015 0.20 0.29 0.38 upper lead width b1 .045 .058 .070 1.14 1.46 1.78 lower lead width b .014 .018 .022 0.36 0.46 0.56 overall row spacing eb .310 .370 .430 7.87 9.40 10.92 mold draft angle top ? 5 10 15 5 10 15 ? 5 10 15 5 10 15 mold draft angle bottom * controlling parameter notes: dimensions d and e1 do not include mold flash or protrusions. mold flash or protrusions shall not exceed .010? (0.254mm) per side. jedec equivalent: ms-001 drawing no. c04-005 significant characteristic note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
tc4467/tc4468/tc4469 ds21425c-page 14 ? 2001-2012 microchip technology inc. 14-lead ceramic dual in-line ? 300 mil (cerdip) .780 (19.81) .740 (18.80) .300 (7.62) .230 (5.84) .200 (5.08) .160 (4.06) .200 (5.08) .125 (3.18) .110 (2.79) .090 (2.29) .065 (1.65) .045 (1.14) .020 (0.51) .016 (0.41) .040 (1.02) .020 (0.51) .098 (2.49) max. .030 (0.76) min. 14-pin cerdip (narrow) .400 (10.16) .320 (8.13) .015 (0.38) .008 (0.20) 3 min. pin 1 .320 (8.13) .290 (7.37) .150 (3.81) min. dimensions: inches (mm) note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
? 2001-2012 microchip technology inc. ds21425c-page 15 tc4467/tc4468/tc4469 16-lead plastic small outline (so) ? wide, 300 mil (soic) foot angle ? 048048 15 12 0 15 12 0 ? mold draft angle bottom 15 12 0 15 12 0 ? mold draft angle top 0.51 0.42 0.36 .020 .017 .014 b lead width 0.33 0.28 0.23 .013 .011 .009 c lead thickness 1.27 0.84 0.41 .050 .033 .016 l foot length 0.74 0.50 0.25 .029 .020 .010 h chamfer distance 10.49 10.30 10.10 .413 .406 .398 d overall length 7.59 7.49 7.39 .299 .295 .291 e1 molded package width 10.67 10.34 10.01 .420 .407 .394 e overall width 0.30 0.20 0.10 .012 .008 .004 a1 standoff 2.39 2.31 2.24 .094 .091 .088 a2 molded package thickness 2.64 2.50 2.36 .104 .099 .093 a overall height 1.27 .050 p pitch 16 16 n number of pins max nom min max nom min dimension limits millimeters inches* units l ? c ? h 45 ? 1 2 d p n b e1 e ? a2 a1 a * controlling parameter notes: dimensions d and e1 do not include mold flash or protrusions. mold flash or protrusions shall not exceed .010? (0.254mm) per side. jedec equivalent: ms-013 drawing no. c04-102 significant characteristic note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
tc4467/tc4468/tc4469 ds21425c-page 16 ? 2001-2012 microchip technology inc. 7.0 revision history revision c (december 2012) added a note to each package outline drawing.
? 2001-2012 microchip technology inc. ds21425c-page 17 tc4467/4468/4469 the microchip web site microchip provides online support via our www site at www.microchip.com . this web site is used as a means to make files and information easily available to customers. accessible by using your favorite internet browser, the web site contains the following information: ? product support ? data sheets and errata, application notes and sample programs, design resources, user?s guides and hardware support documents, latest software releases and archived software ? general technical support ? frequently asked questions (faq), technical support requests, online discussion groups, microchip consultant program member listing ? business of microchip ? product selector and ordering guides, latest microchip press releases, listing of seminars and events, listings of microchip sales offices, distributors and factory representatives customer change notification service microchip?s customer notification service helps keep customers current on microchip products. subscribers will receive e-mail notification whenever there are changes, updates, revisions or errata related to a specified product family or development tool of interest. to register, access the microchip web site at www.microchip.com . under ?support?, click on ?customer change notification? and follow the registration instructions. customer support users of microchip products can receive assistance through several channels: ? distributor or representative ? local sales office ? field application engineer (fae) ? technical support customers should contact their distributor, representative or field application engineer (fae) for support. local sales offices are also available to help customers. a listing of sales offices and locations is included in the back of this document. technical support is available through the web site at: http://microchip.com/support
tc4467/4468/4469 ds21425c-page 18 ? 2001-2012 microchip technology inc. reader response it is our intention to provide you with the best documentation possible to ensure successful use of your microchip product. if you wish to provide your comments on organization, clarity, subject matter, and ways in which our documentation can better serve you, please fax your comments to the technical publications manager at (480) 792-4150. please list the following information, and use this outline to provide us with your comments about this document. to: technical publications manager re: reader response total pages sent ________ from: name company address city / state / zip / country telephone: (_______) _________ - _________ application (optional): would you like a reply? y n device: literature number: questions: fax: (______) _________ - _________ ds21425c tc4467/4468/4469 1. what are the best features of this document? 2. how does this document meet your hardware and software development needs? 3. do you find the organization of this document easy to follow? if not, why? 4. what additions to the document do you think would enhance the structure and subject? 5. what deletions from the document could be made without affecting the overall usefulness? 6. is there any incorrect or misleading information (what and where)? 7. how would you improve this document?
? 2001-2012 microchip technology inc. ds21425c-page19 tc4467/tc4468/tc4469 product identification system to order or obtain information, e. g., on pricing or delivery, refer to the factory or the listed sales office . sales and support data sheets products supported by a preliminary data sheet may have an e rrata sheet describing minor operational differences and recom- mended workarounds. to determine if an erra ta sheet exists for a particular device, please contact one of the following: 1. your local microchip sales office 2. the microchip worldwide site (www.microchip.com) please specify which device, revision of silicon and data sheet (include literature #) you are using. new customer notification system register on our web site (www.microchip.com/cn) to receive the most current information on our products. part no. x xx package temperature range device device: tc4467: 1.2a quad mosfet driver, nand tc4468: 1.2a quad mosfet driver, and tc4469: 1.2a quad mosfet driver, and/inv temperature range: c = 0 ? c to +70 ? c e= -40 ? c to +85 ? c (cerdip only) m= - 55 ? c to +125 ? c (cerdip only) package: pd = plastic dip, (300 mil body), 14-lead jd = ceramic dip, (300 mil body), 14-lead oe = soic (wide), 16-lead oe713 = soic (wide), 16-lead (tape and reel) examples: a) tc4467coe: commerical temperature, soic package. b) tc4467cpd: commercial temperature, pdip package. c) tc4467mjd: military temperature, ceramic dip package. a) tc4468coe713: tape and reel, commerical temp., soic package. b) tc4468cpd: commercial temperature, pdip package. a) tc4469coe: commercial temperature, soic package. b) tc4469cpd: commercial temperature, pdip package.
tc4467/tc4468/tc4469 ds21425c-page 20 ? 2001-2012 microchip technology inc. notes:
? 2001-2012 microchip technology inc. ds21425c-page 21 information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. it is your responsibility to ensure that your application meets with your specifications. microchip makes no representations or warranties of any kind whether express or implied, written or oral, statutory or otherwise, related to the information, including but not limited to its condition, quality, performance, merchantability or fitness for purpose . microchip disclaims all liability arising from this information and its use. use of microchip devices in life support and/or safety applications is entirely at the buyer?s risk, and the buyer agrees to defend, indemnify and hold harmless microchip from any and all damages, claims, suits, or expenses resulting from such use. no licenses are conveyed, implicitly or otherwise, under any microchip intellectual property rights. trademarks the microchip name and logo, the microchip logo, dspic, flashflex, k ee l oq , k ee l oq logo, mplab, pic, picmicro, picstart, pic 32 logo, rfpic, sst, sst logo, superflash and uni/o are registered trademarks of microchip technology incorporated in the u.s.a. and other countries. filterlab, hampshire, hi-tech c, linear active thermistor, mtp, seeval and the embedded control solutions company are registered trademarks of microchip technology incorporated in the u.s.a. silicon storage technology is a registered trademark of microchip technology inc. in other countries. analog-for-the-digital age, app lication maestro, bodycom, chipkit, chipkit logo, codeguard, dspicdem, dspicdem.net, dspicworks, dsspeak, ecan, economonitor, fansense, hi-tide, in-circuit serial programming, icsp, mindi, miwi, mpasm, mpf, mplab certified logo, mplib, mplink, mtouch, omniscient code generation, picc, picc-18, picdem, picdem.net, pickit, pictail, real ice, rflab, select mode, sqi, serial quad i/o, total endurance, tsharc, uniwindriver, wiperlock, zena and z-scale are trademarks of microchip technology incorporated in the u.s.a. and other countries. sqtp is a service mark of microchip technology incorporated in the u.s.a. gestic and ulpp are registered trademarks of microchip technology germany ii gmbh & co. & kg, a subsidiary of microchip technology inc., in other countries. all other trademarks mentioned herein are property of their respective companies. ? 2001-2012, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. isbn: 9781620767993 note the following details of the code protection feature on microchip devices: ? microchip products meet the specification cont ained in their particular microchip data sheet. ? microchip believes that its family of products is one of the most secure families of its kind on the market today, when used i n the intended manner and under normal conditions. ? there are dishonest and possibly illegal methods used to breach the code protection feature. all of these methods, to our knowledge, require using the microchip produc ts in a manner outside the operating specif ications contained in microchip?s data sheets. most likely, the person doing so is engaged in theft of intellectual property. ? microchip is willing to work with the customer who is concerned about the integrity of their code. ? neither microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as ?unbreakable.? code protection is constantly evolving. we at microchip are co mmitted to continuously improvin g the code protection features of our products. attempts to break microchip?s code protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that act. microchip received iso/ts-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona; gresham, oregon and design centers in california and india. the company?s quality system processes and procedures are for its pic ? mcus and dspic ? dscs, k ee l oq ? code hopping devices, serial eeproms, microperipherals, nonvolatile memory and analog products. in addition, microchip?s quality system for the design and manufacture of development systems is iso 9001:2000 certified. quality management s ystem certified by dnv == iso/ts 16949 ==
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